Open AccessEpitaxial Layer Growth of p-type 4H-SiC(0001) by the CST Method and Electrical Properties of MESFET Devices with Epitaxially Grown Layers
Publication year - 2007
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2007.20.12.1056
Subject(s) - materials science , epitaxy , mesfet , optoelectronics , sublimation (psychology) , layer (electronics) , composite material , voltage , transistor , field effect transistor , electrical engineering , psychology , psychotherapist , engineering