Open AccessEpitaxial Layer Growth of p-type 4H-SiC(0001) by the CST Method and Electrical Properties of MESFET Devices with Epitaxially Grown Layers
Author(s) -
Gi-Sub Lee,
Chi-Kwon Park,
Won-Jae Lee,
Byoung-Chul Shin,
Shigehiro Nishino
Publication year - 2007
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2007.20.12.1056
Subject(s) - materials science , epitaxy , mesfet , optoelectronics , sublimation (psychology) , layer (electronics) , composite material , voltage , transistor , field effect transistor , electrical engineering , psychology , psychotherapist , engineering
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