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Effect of High Temperature Annealing on the Characteristics of SiC Schottky Diodes
Publication year - 2006
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2006.19.9.818
Subject(s) - materials science , schottky diode , ohmic contact , annealing (glass) , silicon carbide , schottky barrier , optoelectronics , diode , graphite , reverse leakage current , leakage (economics) , composite material , layer (electronics) , economics , macroeconomics

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