Effect of High Temperature Annealing on the Characteristics of SiC Schottky Diodes
Author(s) -
Hui Jong Cheong,
Wook Bahng,
In-Ho Kang,
Sangcheol Kim,
Hyunsook Han,
Hak Yong Kim,
NamKyun Kim,
YongJae Lee
Publication year - 2006
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2006.19.9.818
Subject(s) - materials science , schottky diode , ohmic contact , annealing (glass) , silicon carbide , schottky barrier , optoelectronics , diode , graphite , reverse leakage current , leakage (economics) , composite material , layer (electronics) , economics , macroeconomics
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