Open AccessThe Development of Deep Silicon Etch Process with Conventional Inductively Coupled Plasma (ICP) Etcher
Publication year - 2004
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2004.17.7.701
Subject(s) - passivation , etching (microfabrication) , microelectromechanical systems , materials science , silicon , inductively coupled plasma , deep reactive ion etching , wafer , reactive ion etching , dry etching , plasma etching , optoelectronics , analytical chemistry (journal) , nanotechnology , plasma , chemistry , layer (electronics) , physics , quantum mechanics , chromatography
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