Open AccessReactive ion Etching Characterization of SiC Film Deposited by Thermal CVD Method for MEMS Application
Author(s) -
최기용,
Duck-Kyun Choi,
Ji Yeon Park,
Tae Song Kim
Publication year - 2004
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2004.17.3.299
Subject(s) - materials science , reactive ion etching , microelectromechanical systems , silicon carbide , etching (microfabrication) , torr , dry etching , analytical chemistry (journal) , volumetric flow rate , chamber pressure , silicon , composite material , nanotechnology , optoelectronics , layer (electronics) , chemistry , metallurgy , physics , chromatography , quantum mechanics , thermodynamics
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