Open AccessA Novel Lateral Trench Electrode IGBT for Suprior Electrical Characteristics
Publication year - 2002
Publication title -
journal of the korean institute of electrical and electronic material engineers
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2002.15.9.758
Subject(s) - trench , materials science , electrode , optoelectronics , breakdown voltage , electrical engineering , voltage , insulated gate bipolar transistor , transistor , engineering , composite material , chemistry , layer (electronics)
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