Open AccessCharacteristics of CMOS Transistor using Dual Poly-metal(W/WNx/Poly-Si) Gate Electrode
Publication year - 2002
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2002.15.3.233
Subject(s) - pmos logic , dram , nmos logic , cmos , materials science , electrical engineering , optoelectronics , electrode , transistor , saturation (graph theory) , metal gate , gate oxide , physics , voltage , engineering , mathematics , quantum mechanics , combinatorics