Open AccessEffect of Ti Concentration on the Microstructure of Al and the Tunnel Magnetoresistance Behaviors of the Magnetic Tunnel Junction with a Ti-alloyed Al-oxide Barrier
Publication year - 2005
Publication title -
han-guk jagi hakoeji/han'gug ja'gi haghoeji
Language(s) - English
Resource type - Journals
eISSN - 2233-6648
pISSN - 1598-5385
DOI - 10.4283/jkms.2005.15.6.311
Subject(s) - materials science , quantum tunnelling , tunnel magnetoresistance , magnetoresistance , microstructure , annealing (glass) , oxide , alloy , condensed matter physics , metallurgy , composite material , optoelectronics , magnetic field , layer (electronics) , physics , quantum mechanics