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IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition
Author(s) -
Shinichi Kobayashi
Publication year - 2016
Publication title -
world journal of condensed matter physics
Language(s) - English
Resource type - Journals
eISSN - 2160-6919
pISSN - 2160-6927
DOI - 10.4236/wjcmp.2016.64027
Subject(s) - plasma enhanced chemical vapor deposition , materials science , silicon nitride , chemical vapor deposition , substrate (aquarium) , analytical chemistry (journal) , absorption (acoustics) , electronegativity , deposition (geology) , plasma , silicon , optoelectronics , chemistry , composite material , organic chemistry , paleontology , oceanography , sediment , biology , physics , quantum mechanics , geology

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