z-logo
open-access-imgOpen Access
IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition
Author(s) -
Shinichi Kobayashi
Publication year - 2016
Publication title -
world journal of condensed matter physics
Language(s) - English
Resource type - Journals
eISSN - 2160-6919
pISSN - 2160-6927
DOI - 10.4236/wjcmp.2016.64027
Subject(s) - plasma enhanced chemical vapor deposition , materials science , silicon nitride , chemical vapor deposition , substrate (aquarium) , analytical chemistry (journal) , absorption (acoustics) , electronegativity , deposition (geology) , plasma , silicon , optoelectronics , chemistry , composite material , organic chemistry , paleontology , oceanography , sediment , biology , physics , quantum mechanics , geology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom