Open AccessEffects of Annealing Conditions on ZnO Buffer Layer for Inverted Polymer Solar Cells
Author(s) -
Chuan Liu,
Lihua Zheng,
Zhiyang Gao,
Yuhui Gan,
Jian Zhang,
Chuannan Li
Publication year - 2013
Publication title -
optics and photonics journal
Language(s) - English
Resource type - Journals
eISSN - 2160-889X
pISSN - 2160-8881
DOI - 10.4236/opj.2013.32b052
Subject(s) - buffer (optical fiber) , annealing (glass) , materials science , energy conversion efficiency , layer (electronics) , active layer , zinc , optoelectronics , polymer , polymer solar cell , chemical engineering , nanotechnology , composite material , metallurgy , computer science , telecommunications , engineering , thin film transistor
A solution-processed zinc oxide (ZnO) thin film as the buffer layer with optimized processes especially the annealing conditions for inverted polymer solar cells (PSCs) has been demonstrated. Firstly the thickness of ZnO buffer layer was optimized, and different annealing conditions including temperature and time have also been taken into consideration. And the best Power Conversion Efficiency (PCE) 3.434% was observed when the ZnO buffer layer was spin–coated at 1500 rpm and annealed at 275℃ for 5 min, and AFM results showed that morphology of this ZnO film has the best uniformity which was beneficial to form high quality polymer composite active layer.