Open AccessEffect of the Doping Layer Concentration on Optical Absorption in Si δ-Doped GaAs Layer
Author(s) -
Hassen Dakhlaoui
Publication year - 2012
Publication title -
optics and photonics journal
Language(s) - English
Resource type - Journals
eISSN - 2160-889X
pISSN - 2160-8881
DOI - 10.4236/opj.2012.23020
Subject(s) - electric field , absorption (acoustics) , doping , optoelectronics , materials science , quantum well , layer (electronics) , field (mathematics) , laser , optics , physics , nanotechnology , mathematics , quantum mechanics , pure mathematics
We study in this paper the intersubband optical absorption of Si doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solving the Schrödinger and Poisson equations self-consistently. From our results, it is clear that the subband energies and intersubband optical absorption are quite sensitive to the applied electric field. Also our results indicate that the optical absorption depends not only on the electric field but also on the donor’s concentration. The results of this work should provide useful guidance for the design of optically pumped quantum well lasers and quantum well infrared photo detectors (QWIPs)