Open AccessAccurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)
Author(s) -
Yacouba Issa Diakité,
Sibiri D. Traore,
Yuriy Malozovsky,
Bethuel Khamala,
Lashounda Franklin,
Diola Bagayoko
Publication year - 2017
Publication title -
journal of modern physics
Language(s) - English
Resource type - Journals
eISSN - 2153-120X
pISSN - 2153-1196
DOI - 10.4236/jmp.2017.84035
Subject(s) - local density approximation , lattice constant , gallium arsenide , bulk modulus , materials science , density functional theory , band gap , linear combination of atomic orbitals , condensed matter physics , ab initio , gallium nitride , gallium , electronic structure , electronic band structure , density of states , direct and indirect band gaps , physics , chemistry , computational chemistry , nanotechnology , quantum mechanics , metallurgy , layer (electronics) , basis set , diffraction