Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs) | Zendy

Yacouba Issa Diakité | Zendy; Sibiri D. Traore | Zendy; Yuriy Malozovsky | Zendy; Bethuel Khamala | Zendy; Lashounda Franklin | Zendy; Diola Bagayoko | Zendy

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Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Author(s) -

Yacouba Issa Diakité,

Sibiri D. Traore,

Yuriy Malozovsky,

Bethuel Khamala,

Lashounda Franklin,

Diola Bagayoko

Publication year - 2017

Publication title -

journal of modern physics

Language(s) - English

Resource type - Journals

eISSN - 2153-120X

pISSN - 2153-1196

DOI - 10.4236/jmp.2017.84035

Subject(s) - local density approximation , lattice constant , gallium arsenide , bulk modulus , materials science , density functional theory , band gap , linear combination of atomic orbitals , condensed matter physics , ab initio , gallium nitride , gallium , electronic structure , electronic band structure , density of states , direct and indirect band gaps , physics , chemistry , computational chemistry , nanotechnology , quantum mechanics , metallurgy , layer (electronics) , basis set , diffraction

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