
On the Absence of Carrier Drift in Two-Terminal Devices and the Origin of Their Lowest Resistance Per Carrier R<sub>k</sub>=h/Q<sup>2</sup>
Author(s) -
I. Izpura
Publication year - 2012
Publication title -
journal of modern physics
Language(s) - English
Resource type - Journals
eISSN - 2153-120X
pISSN - 2153-1196
DOI - 10.4236/jmp.2012.38100
Subject(s) - physics , noise (video) , charge carrier , electric field , resistor , shot noise , condensed matter physics , quantum mechanics , voltage , optics , computer science , artificial intelligence , image (mathematics) , detector
After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum Hall resistance Rk=h/q2