z-logo
open-access-imgOpen Access
Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering
Author(s) -
Naidan Miao,
Peipei Li,
Jianhao Wen,
Jinxi Wei,
Baichuan Zhang,
Shiqi Wang,
Ruwen Zeng,
Guanyu Wang,
Chunyu Zhou
Publication year - 2020
Publication title -
journal of applied mathematics and physics
Language(s) - English
Resource type - Journals
eISSN - 2327-4379
pISSN - 2327-4352
DOI - 10.4236/jamp.2020.82017
Subject(s) - heterojunction bipolar transistor , cutoff frequency , materials science , bipolar junction transistor , silicon on insulator , common emitter , optoelectronics , heterojunction , heterostructure emitter bipolar transistor , silicon germanium , transistor , electrical engineering , voltage , silicon , engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here