Open AccessStatic and Dynamic Characterization of High-Speed Silicon Carbide (SiC) Power Transistors
Author(s) -
Johnson Asumadu
Publication year - 2010
Publication title -
engineering
Language(s) - English
Resource type - Journals
eISSN - 1947-3931
pISSN - 1947-394X
DOI - 10.4236/engineering.2010.29087
Subject(s) - silicon carbide , materials science , wafer , bipolar junction transistor , power semiconductor device , optoelectronics , transistor , silicon , carbide , silicon bandgap temperature sensor , electrical engineering , engineering physics , voltage , engineering , composite material , voltage reference , dropout voltage