An Explicit Surface-Potential Based Biaxial Strained-Si n-MOSFET Model for Circuit Simulation
Author(s) -
T. K. Maiti
Publication year - 2010
Publication title -
engineering
Language(s) - English
Resource type - Journals
eISSN - 1947-3931
pISSN - 1947-394X
DOI - 10.4236/engineering.2010.211111
Subject(s) - mosfet , materials science , voltage , electronic band structure , inversion (geology) , electron , scalability , computational physics , surface (topology) , oxide , condensed matter physics , optoelectronics , electronic engineering , transistor , physics , electrical engineering , computer science , engineering , mathematics , quantum mechanics , geometry , paleontology , structural basin , biology , database , metallurgy
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