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Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs
Author(s) -
Yashu Swami,
Sanjeev Rai
Publication year - 2021
Publication title -
circuits and systems
Language(s) - English
Resource type - Journals
eISSN - 2153-1293
pISSN - 2153-1285
DOI - 10.4236/cs.2021.124004
Subject(s) - subthreshold conduction , materials science , optoelectronics , threshold voltage , subthreshold slope , technology cad , drain induced barrier lowering , mosfet , quantum dot , cmos , leakage (economics) , node (physics) , voltage , electronic engineering , electrical engineering , transistor , engineering , structural engineering , engineering drawing , cad , economics , macroeconomics

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