Open Access28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I
Author(s) -
Ali Mohsen,
Ahmad Harb,
Nathalie Deltimple,
Abraham Serhane
Publication year - 2017
Publication title -
circuits and systems
Language(s) - English
Resource type - Journals
eISSN - 2153-1293
pISSN - 2153-1285
DOI - 10.4236/cs.2017.84006
Subject(s) - transistor , silicon on insulator , node (physics) , cmos , reliability (semiconductor) , electrical engineering , electronic engineering , engineering , materials science , optoelectronics , engineering physics , silicon , physics , power (physics) , structural engineering , quantum mechanics , voltage
International audienceNowadays, transistor technology is going toward the fully depleted architecture; the bulk transistors are becoming more complex in manufacturing as the transistor size is becoming smaller to achieve the high performance especially at the node 28 nm. This is the first of two papers that discuss the basic drawbacks of the bulk transistors and explain the two alternative transistors: 28 nm UTBB FD-SOI CMOS and the 22 nm Tri-Gate FinFET. The accompanying paper, Part II, focuses on the comparison between those alternatives and their physical properties, electrical properties, and reliability tests to properly set the preferences when choosing for different mobile media and consumers’ applications