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Experimental Characterization of ALD Grown Al<SUB>2</SUB>O<SUB>3</SUB> Film for Microelectronic Applications
Author(s) -
Wang Yu-Xi,
Yida Chen,
Yong Zhang,
Zhaoxin Zhu,
Tao Wu,
Xufeng Kou,
Pingping Ding,
Romain Corcolle,
J. Kim
Publication year - 2021
Publication title -
advances in materials physics and chemistry
Language(s) - English
Resource type - Journals
eISSN - 2162-5328
pISSN - 2162-531X
DOI - 10.4236/ampc.2021.111002
Subject(s) - capacitor , materials science , capacitance , dissipation factor , atomic layer deposition , dielectric , optoelectronics , analytical chemistry (journal) , electrolytic capacitor , film capacitor , tantalum nitride , microelectronics , thin film , electrical engineering , voltage , electrode , nanotechnology , chemistry , chromatography , engineering

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