Open AccessCurrent-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces
Author(s) -
Gopal G. Pethuraja,
Roger E. Welser,
Ashok K. Sood,
ChangWoo Lee,
Nicholas J. Alexander,
Harry Efstathiadis,
Pradeep Haldar,
Jennifer L. Harvey
Publication year - 2012
Publication title -
advances in materials physics and chemistry
Language(s) - English
Resource type - Journals
eISSN - 2162-5328
pISSN - 2162-531X
DOI - 10.4236/ampc.2012.22010
Subject(s) - ohmic contact , materials science , optoelectronics , annealing (glass) , silicon , contact resistance , schottky barrier , indium tin oxide , amorphous solid , sputtering , amorphous silicon , schottky diode , thin film , nanotechnology , crystalline silicon , metallurgy , layer (electronics) , diode , crystallography , chemistry
We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a ro-bust ohmic contact for Si based optoelectronic devices
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