Open AccessCharacteristics of Ferroelectric Transistors with BaMgF 4 Dielectric
Author(s) -
Lyu JongSon,
Jeong JinWoo,
Kim KwangHo,
Kim BoWoo,
Yoo Hyung Joun
Publication year - 1998
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.98.0198.0208
Subject(s) - materials science , ferroelectricity , optoelectronics , dielectric , transistor , capacitor , electrode , ferroelectric capacitor , polarization (electrochemistry) , non volatile memory , field effect transistor , electrical engineering , voltage , chemistry , engineering
The structure and electrical characteristics of metal‐ferroelectric‐semiconductor FET (MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/ drain electrodes and BaMgF 4 film as a gate dielectric. The polysilicon source and drain were built‐up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about 0.6 μ C/cm 2 and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I ‐ V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.