Open AccessRealization of Vertically Stacked InGaAs/GaAs Quantum Wires on V‐grooves with (322) Facet Sidewalls by Chemical Beam Epitaxy
Author(s) -
Kim SungBock,
Ro JeongRae,
Lee ElHang
Publication year - 1998
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.98.0198.0207
Subject(s) - chemical beam epitaxy , materials science , fabrication , photoluminescence , optoelectronics , facet (psychology) , transmission electron microscopy , quantum wire , molecular beam epitaxy , quantum well , gallium arsenide , epitaxy , metalorganic vapour phase epitaxy , nanotechnology , quantum , optics , laser , physics , layer (electronics) , medicine , psychology , social psychology , alternative medicine , personality , pathology , quantum mechanics , big five personality traits
We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V‐grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V‐grooves with (100)‐(322) facet configuration instead of (100)‐(111) base at 450 °C. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about 200Å × 500 ~ 600 Å. Three distinct photoluminescence peaks related with side‐quantum wells (QWLs), top‐QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.