Open AccessA Novel Body‐tied Silicon‐On‐Insulator(SOI) n‐channel Metal‐Oxide‐Semiconductor Field‐Effect Transistor with Grounded Body Electrode
Author(s) -
Kang WonGu,
Lyu JongSon,
Yoo Hyung Joun
Publication year - 1996
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.96.0196.0041
Subject(s) - silicon on insulator , materials science , field effect transistor , optoelectronics , transistor , electrode , silicon , semiconductor , electrical engineering , metal , engineering , physics , voltage , metallurgy , quantum mechanics
A novel body‐tied silicon‐on‐insulator(SOI) n‐channel metal‐oxide‐semiconductor field‐effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch‐back technology. It has no floating body effect such as kink phenomena on the drain current curves, single‐transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current (I DS ‐V DS ) curves, substrate resistance effect on the I DS ‐V DS curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high‐speed and low‐voltage VLSI circuits.