Open AccessA GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand‐Held Phone
Author(s) -
Lee JongLam,
Kim Haecheon,
Mun Jae Kyung,
Kwon Ohseung,
Lee Jae Jin,
Hwang In Duk,
Park HyungMoo
Publication year - 1995
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.95.0195.0001
Subject(s) - mesfet , intermodulation , electrical engineering , materials science , power gain , power semiconductor device , optoelectronics , power (physics) , voltage , field effect transistor , transistor , rf power amplifier , cmos , engineering , amplifier , physics , quantum mechanics
A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital hand‐held phone. The device has been fabricated on an epitaxial layer with a low‐high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using 0.8 μ m design rule, showed a maximum drain current density of 330 mA/mm at V gs = 0.5V and a gate‐to‐drain breakdown voltage of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5‐dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third‐order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand‐held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third‐order intercept point can reduce the third‐order intermodulation.