Open AccessImpact of Energy Relaxation of Channel Electrons on Drain‐Induced Barrier Lowering in Nano‐Scale Si‐Based MOSFETs
Author(s) -
Mao LingFeng
Publication year - 2017
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.17.0116.0750
Subject(s) - drain induced barrier lowering , electron , materials science , channel length modulation , doping , field effect transistor , mosfet , transistor , electric field , condensed matter physics , optoelectronics , electrical engineering , physics , voltage , engineering , quantum mechanics
Drain‐induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short‐channel effect for nano metal‐oxide semiconductor field‐effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two‐dimensional approximations based on the energy‐conservation equation for channel electrons in FETs, which is different from the former field‐penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration‐dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.