Open AccessPulse‐Mode Dynamic R on Measurement of Large‐Scale High‐Power AlGaN/GaN HFET
Author(s) -
Kim Minki,
Park Youngrak,
Park Junbo,
Jung Dong Yun,
Jun ChiHoon,
Ko Sang Choon
Publication year - 2017
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.17.0116.0385
Subject(s) - materials science , optoelectronics , power (physics) , stress (linguistics) , pulse (music) , inverter , mode (computer interface) , voltage , electronic engineering , electrical engineering , computer science , engineering , physics , quantum mechanics , operating system , philosophy , linguistics
We propose pulse‐mode dynamic R on measurement as a method for analyzing the effect of stress on large‐scale high‐power AlGaN/GaN HFETs. The measurements were carried out under the soft‐switching condition (zero‐voltage switching) and aimed to minimize the self‐heating problem that exists with the conventional hard‐switching measurement. The dynamic R on of the fabricated AlGaN/GaN MIS‐HFETs was measured under different stabilization time conditions. To do so, the drain‐gate bias is set to zero after applying the off‐state stress. As the stabilization time increased from 0.1 μs to 100 ms, the dynamic R on decreased from 160 Ω to 2 Ω. This method will be useful in developing high‐performance GaN power FETs suitable for use in high‐efficiency converter/inverter topology design.