Open AccessDiode and MOSFET Properties of Trench‐Gate‐Type Super‐Barrier Rectifier with P‐Body Implantation Condition for Power System Application
Author(s) -
Won Jong Il,
Park Kun Sik,
Cho Doo Hyung,
Koo Jin Gun,
Kim Sang Gi,
Lee Jin Ho
Publication year - 2016
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.16.2515.0024
Subject(s) - materials science , diode , optoelectronics , mosfet , trench , reverse leakage current , electrical engineering , ion implantation , power mosfet , p–n junction , voltage , schottky diode , engineering , chemistry , semiconductor , transistor , nanotechnology , ion , layer (electronics) , organic chemistry
In this paper, we investigate the electrical characteristics of two trench‐gate‐type super‐barrier rectifiers (TSBRs) under different p‐body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs’ electrical properties depend strongly on their respective p‐body implantation conditions. In the case of the TSBR with a low p‐body implantation condition, it exhibits MOSFET‐like properties, such as a low forward voltage ( V F ) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p‐body implantation condition, it exhibits pn junction diode–like properties, such as a high V F , low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p‐body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p‐body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.