Open AccessElectrothermal Analysis for Super‐Junction TMOSFET with Temperature Sensor
Author(s) -
Lho Young Hwan,
Yang YilSuk
Publication year - 2015
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.15.0115.0226
Subject(s) - materials science , junction temperature , optoelectronics , diode , reliability (semiconductor) , power mosfet , mosfet , transistor , voltage , electrical engineering , trench , power semiconductor device , power (physics) , engineering , nanotechnology , physics , quantum mechanics , layer (electronics)
For a conventional power metal–oxide–semiconductor field‐effect transistor (MOSFET), there is a trade‐off between specific on‐state resistance and breakdown voltage. To overcome this trade‐off, a super‐junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature‐sensing structures — diode and resistive. In this paper, a diode‐type temperature‐sensing structure for a TMOSFET is designed for a brushless direct current motor with on‐resistance of 96 mΩ·mm 2 . The temperature distribution for an ultra‐low on‐resistance power MOSFET has been analyzed for various bonding schemes. The multi‐bonding and stripe bonding cases show a maximum temperature that is lower than that for the single‐bonding case. It is shown that the metal resistance at the source area is non‐negligible and should therefore be considered depending on the application for current driving capability.