Open AccessHigh‐Performance Amorphous Multilayered ZnO‐SnO 2 Heterostructure Thin‐Film Transistors: Fabrication and Characteristics
Author(s) -
Lee SuJae,
Hwang ChiSun,
Pi JaeEun,
Yang JongHeon,
Byun ChunWon,
Chu Hye Yong,
Cho KyoungIk,
Cho Sung Haeng
Publication year - 2015
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.15.0114.0743
Subject(s) - materials science , heterojunction , amorphous solid , optoelectronics , thin film transistor , transistor , nanotechnology , layer (electronics) , voltage , electrical engineering , chemistry , crystallography , engineering
Multilayered ZnO‐SnO 2 heterostructure thin films consisting of ZnO and SnO 2 layers are produced by alternating the pulsed laser ablation of ZnO and SnO 2 targets, and their structural and field‐effect electronic transport properties are investigated as a function of the thickness of the ZnO and SnO 2 layers. The performance parameters of amorphous multilayered ZnO‐SnO 2 heterostructure thin‐film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. A highest electron mobility of 43 cm 2 /V·s, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on‐to‐off ratio of 10 10 are obtained for the amorphous multilayered ZnO(1.5 nm)‐SnO 2 (1.5 nm) heterostructure TFTs, which is adequate for the operation of next‐generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO‐SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO‐SnO 2 interface layers.