Open AccessHigh Performance Millimeter‐Wave Image Reject Low‐Noise Amplifier Using Inter‐stage Tunable Resonators
Author(s) -
Kim Jihoon,
Kwon Youngwoo
Publication year - 2014
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.14.0213.0325
Subject(s) - extremely high frequency , resonator , amplifier , low noise amplifier , stage (stratigraphy) , noise (video) , acoustics , electronic engineering , millimeter , materials science , optoelectronics , computer science , image (mathematics) , physics , optics , engineering , artificial intelligence , geology , cmos , paleontology
A Q‐band pHEMT image‐rejection low‐noise amplifier (IR‐LNA) is presented using inter‐stage tunable resonators. The inter‐stage L‐C resonators can maximize an image rejection by functioning as inter‐stage matching circuits at an operating frequency (F OP ) and short circuits at an image frequency (F IM ). In addition, it also brings more wideband image rejection than conventional notch filters. Moreover, tunable varactors in L‐C resonators not only compensate for the mismatch of an image frequency induced by the process variation or model error but can also change the image frequency according to a required RF frequency. The implemented pHEMT IR‐LNA shows 54.3 dB maximum image rejection ratio (IRR). By changing the varactor bias, the image frequency shifts from 27 GHz to 37 GHz with over 40 dB IRR, a 19.1 dB to 17.6 dB peak gain, and 3.2 dB to 4.3 dB noise figure. To the best of the authors' knowledge, it shows the highest IRR and F IM /F OP of the reported millimeter/quasi‐millimeter wave IR‐LNAs.