Open AccessGeneration and Detection of Terahertz Waves Using Low‐Temperature‐Grown GaAs with an Annealing Process
Author(s) -
Moon Kiwon,
Choi Jeongyong,
Shin JunHwan,
Han SangPil,
Ko Hyunsung,
Kim Namje,
Park JeongWoo,
Yoon YoungJong,
Kang KwangYong,
Ryu HanCheol,
Park Kyung Hyun
Publication year - 2014
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.14.0213.0319
Subject(s) - terahertz radiation , annealing (glass) , materials science , optoelectronics , photoconductivity , gallium arsenide , metallurgy
In this letter, we present low‐temperature grown GaAs (LTG‐GaAs)‐based photoconductive antennas for the generation and detection of terahertz (THz) waves. The growth of LTG‐GaAs and the annealing temperatures are systematically discussed based on the material characteristics and the properties of THz emission and detection. The optimum annealing temperature depends on the growth temperature, which turns out to be 540°C to 580°C for the initial excess arsenic density of 2 × 10 19 / c m 3to 8 × 10 19 / c m 3 .