Open AccessExtended Trench Gate Superjunction Lateral Power MOSFET for Ultra‐Low Specific on‐Resistance and High Breakdown Voltage
Author(s) -
Cho Doohyung,
Kim Kwangsoo
Publication year - 2014
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.14.0113.0826
Subject(s) - trench , materials science , breakdown voltage , power mosfet , optoelectronics , doping , mosfet , transistor , electrical engineering , voltage , depletion region , tilt (camera) , high voltage , field effect transistor , semiconductor , layer (electronics) , engineering , nanotechnology , mechanical engineering
In this paper, a lateral power metal–oxide–semiconductor field‐effect transistor with ultra‐low specific on‐resistance is proposed to be applied to a high‐voltage (up to 200 V) integrated chip. The proposed structure has two characteristics. Firstly, a high level of drift doping concentration can be kept because a tilt‐implanted p‐drift layer assists in the full depletion of the n‐drift region. Secondly, charge imbalance is avoided by an extended trench gate, which suppresses the trench corner effect occurring in the n‐drift region and helps achieve a high breakdown voltage (BV). Compared to a conventional trench gate, the simulation result shows a 37.5% decrease in R on.sp and a 16% improvement in BV.