Open Access380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure
Author(s) -
Bae SungBum,
Kim SungBok,
Kim DongChurl,
Nam Eun Soo,
Lim SungMook,
Son JeongHwan,
Jo YiSang
Publication year - 2013
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.13.1912.0029
Subject(s) - light emitting diode , materials science , optoelectronics , ultraviolet , chemical vapor deposition , sapphire , diode , quantum well , optics , laser , physics
In this paper, we demonstrate the capabilities of 380‐nm ultraviolet (UV) light‐emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi‐structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al‐metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.