Open AccessFabrication of Superjunction Trench Gate Power MOSFETs Using BSG‐Doped Deep Trench of p‐Pillar
Author(s) -
Kim Sang Gi,
Park Hoon Soo,
Na Kyoung Il,
Yoo Seong Wook,
Won Jongil,
Koo Jin Gun,
Chai Sang Hoon,
Park HyungMoo,
Yang Yil Suk,
Lee Jin Ho
Publication year - 2013
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.13.1912.0012
Subject(s) - trench , materials science , doping , mosfet , pillar , optoelectronics , boron , fabrication , power mosfet , breakdown voltage , process (computing) , layer (electronics) , electronic engineering , voltage , electrical engineering , nanotechnology , engineering , computer science , transistor , mechanical engineering , chemistry , medicine , alternative medicine , organic chemistry , pathology , operating system
In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n drift layer due to the trenched p‐pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.