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A Transparent Logic Circuit for RFID Tag in a‐IGZO TFT Technology
Author(s) -
Yang ByungDo,
Oh JaeMun,
Kang HyeongJu,
Park SangHee,
Hwang ChiSun,
Ryu Min Ki,
Pi JaeEun
Publication year - 2013
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.13.1912.0004
Subject(s) - thin film transistor , logic gate , pass transistor logic , transistor , electrical engineering , electronic engineering , chip , electronic circuit , computer science , materials science , cmos , optoelectronics , logic level , computer hardware , engineering , digital electronics , nanotechnology , layer (electronics) , voltage
This paper proposes a transparent logic circuit for radio frequency identification (RFID) tags in amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT) technology. The RFID logic circuit generates 16‐bit code programmed in read‐only memory. All circuits are implemented in a pseudo‐CMOS logic style using transparent a‐IGZO TFTs. The transmittance degradation due to the transparent RFID logic chip is 2.5% to 8% in a 300‐nm to 800‐nm wavelength. The RFID logic chip generates Manchester‐encoded 16‐bit data with a 3.2‐kHz clock frequency and consumes 170 μW at V DD = 6   V . It employs 222 transistors and occupies a chip area of 5.85 mm 2 .

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