Open AccessA Ka‐Band 6‐W High Power MMIC Amplifier with High Linearity for VSAT Applications
Author(s) -
Jeong JinCheol,
Jang DongPil,
Yom InBok
Publication year - 2013
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.13.0212.0407
Subject(s) - amplifier , linearity , monolithic microwave integrated circuit , electrical engineering , rf power amplifier , high electron mobility transistor , power added efficiency , linear amplifier , microwave , power bandwidth , direct coupled amplifier , materials science , electronic engineering , engineering , telecommunications , operational amplifier , transistor , cmos , voltage
A Ka‐band 6‐W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15‐μm GaAs pHEMT technology. This three‐stage amplifier, with a chip size of 22.1 mm 2 can achieve a saturated output power of 6 W with a 21% power‐added efficiency and 15‐dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class‐A bias and demonstrates an output third‐order intercept point of greater than 43.5 dBm over the above‐mentioned frequency range.