Open AccessReactive Sputtering Process for CuIn 1‐x Ga x Se 2 Thin Film Solar Cells
Author(s) -
Park NaeMan,
Lee Ho Sub,
Kim Jeha
Publication year - 2012
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.12.0212.0062
Subject(s) - sputtering , copper indium gallium selenide solar cells , materials science , soda lime glass , thin film , solar cell , crystal (programming language) , grain size , energy conversion efficiency , analytical chemistry (journal) , flux (metallurgy) , metallurgy , optoelectronics , nanotechnology , chemistry , composite material , computer science , programming language , chromatography
CuIn 1‐x Ga x Se 2 (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and (In 0.7 Ga 0.3 ) 2 Se 3 targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800‐nm CIGS film is 8.5%.