Open AccessDesign of 100‐V Super‐Junction Trench Power MOSFET with Low On‐Resistance
Author(s) -
Lho Young Hwan,
Yang YilSuk
Publication year - 2012
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.12.0211.0251
Subject(s) - mosfet , trench , power mosfet , power semiconductor device , materials science , breakdown voltage , transistor , electrical engineering , field effect transistor , voltage , power electronics , semiconductor device , optoelectronics , electronic engineering , engineering , nanotechnology , layer (electronics)
Power metal‐oxide semiconductor field‐effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double‐diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on‐state resistance and breakdown voltage. To overcome the tradeoff relationship, a super‐junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on‐state resistance of 1.2 mΩ‐cm 2 at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.