Open AccessE‐Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process
Author(s) -
Kim BongSu,
Byun WooJin,
Kang MinSoo,
Kim Kwang Seon
Publication year - 2012
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.12.0111.0644
Subject(s) - noise figure , monolithic microwave integrated circuit , high electron mobility transistor , wideband , low noise amplifier , electrical engineering , gallium arsenide , optoelectronics , flatness (cosmology) , amplifier , transistor , materials science , electronic engineering , engineering , physics , cmos , voltage , cosmology , quantum mechanics
In this paper, the implementations of a 0.1 µm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single‐chip receiver for 70/80 GHz point‐to‐point communications are presented. To obtain high‐gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five‐stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five‐stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of –1.5 dBm to 1.5 dBm. Finally, a single‐chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of –21 dBm.