Open AccessA Subthreshold CMOS RF Front‐End Design for Low‐Power Band‐III T‐DMB/DAB Receivers
Author(s) -
Kim Seongdo,
Choi Janghong,
Lee Joohyun,
Koo Bontae,
Kim Cheonsoo,
Eum Nakwoong,
Yu Hyunkyu,
Jung Heebum
Publication year - 2011
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.11.0211.0055
Subject(s) - rf front end , cmos , noise figure , subthreshold conduction , electrical engineering , front and back ends , tuner , radio frequency , rf power amplifier , power (physics) , power consumption , engineering , electronic engineering , optoelectronics , materials science , transistor , physics , amplifier , voltage , mechanical engineering , quantum mechanics
This letter presents a CMOS RF front‐end operating in a subthreshold region for low‐power Band‐III mobile TV applications. The performance and feasibility of the RF front‐end are verified by integrating with a low‐IF RF tuner fabricated in a 0.13‐μm CMOS technology. The RF front‐end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front‐end is 13.8 mW from a 1.2 V supply.