Open AccessPolymer Dielectrics and Orthogonal Solvent Effects for High‐Performance Inkjet‐Printed Top‐Gated P‐Channel Polymer Field‐Effect Transistors
Author(s) -
Baeg KangJun,
Khim Dongyoon,
Jung SoonWon,
Koo Jae Bon,
You InKyu,
Nah YoonChae,
Kim DongYu,
Noh YongYoung
Publication year - 2011
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.11.0111.0321
Subject(s) - organic field effect transistor , materials science , dielectric , transistor , gate dielectric , polymer , field effect transistor , optoelectronics , solvent , organic chemistry , chemistry , electrical engineering , voltage , composite material , engineering
We investigated the effects of a gate dielectric and its solvent on the characteristics of top‐gated organic field‐effect transistors (OFETs). Despite the rough top surface of the inkjet‐printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3‐hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p‐type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high‐performance organic electronic circuits.