Open AccessPerformance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep‐Ridge Waveguides
Author(s) -
Leem Young Ahn,
Kim Kisoo,
Song JungHo,
Kwon OKyun,
Kim Gyungock
Publication year - 2010
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.10.0209.0172
Subject(s) - lasing threshold , materials science , optoelectronics , silicon , diode , laser , optics , waveguide , laser diode , hybrid silicon laser , transverse mode , substrate (aquarium) , silicon on insulator , wavelength , physics , oceanography , geology
The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single‐mode silicon waveguide, which is necessary for a wavelength‐division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of 3.7µm. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 µm), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices.