Open AccessTemperature‐Adaptive Back‐Bias Voltage Generator for an RCAT Pseudo SRAM
Author(s) -
Son JongPil,
Byun HyunGeun,
Jun YoungHyun,
Kim Kinam,
Kim SooWon
Publication year - 2010
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.10.0109.0366
Subject(s) - static random access memory , biasing , voltage , transistor , dependency (uml) , generator (circuit theory) , detector , leakage (economics) , electrical engineering , electronic engineering , computer science , optoelectronics , materials science , engineering , physics , power (physics) , software engineering , quantum mechanics , economics , macroeconomics
In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back‐bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back‐bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back‐bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of −0.85 mV/°C, and its static current consumption is found to be only 0.83 µA@2.0 V.