Open Access2.4 GHz WLAN InGaP/GaAs Power Amplifier with Temperature Compensation Technique
Author(s) -
Yoon SangWoong,
Kim ChangWoo
Publication year - 2009
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.09.0209.0089
Subject(s) - heterojunction bipolar transistor , amplifier , resistor , electrical engineering , compensation (psychology) , bipolar junction transistor , materials science , dbm , atmospheric temperature range , power (physics) , optoelectronics , transistor , junction temperature , electronic engineering , engineering , voltage , cmos , physics , psychology , quantum mechanics , meteorology , psychoanalysis
This letter presents a high performance 2.4 GHz two‐stage power amplifier (PA) operating in the temperature range from −30…C to +85 o C for IEEE 802.11g, wireless local area network application. It is implemented in InGaP/GaAs hetero‐junction bipolar transistor technology and has a bias circuit employing a temperature compensation technique for error vector magnitude (EVM) performance. The technique uses a resistor made with a base layer of HBT. The design improves EVM performance in cold temperatures by increasing current. The implemented PA has a dynamic EVM of less than 4%, a gain of over 26 dB, and a current less than 130 mA below the output power of 19 dBm across the temperature range from −30 o C to +85 o C.