Open AccessLight Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
Author(s) -
Shin JaeHeon,
Lee JiSu,
Hwang ChiSun,
Park SangHee Ko,
Cheong WooSeok,
Ryu Minki,
Byun ChunWon,
Lee JeongIk,
Chu Hye Yong
Publication year - 2009
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.09.0208.0266
Subject(s) - thin film transistor , materials science , optoelectronics , transistor , trapping , insulator (electricity) , layer (electronics) , nanotechnology , electrical engineering , voltage , engineering , ecology , biology
We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo‐generated holes at the gate insulator and/or insulator/channel interface.