Open AccessInGaAsP/InP Buried‐Ridge Waveguide Laser with Improved Lateral Single‐Mode Property
Author(s) -
Oh Su Hwan,
Kim Ki Soo,
Kwon Oh Kee,
Oh Kwang Ryong
Publication year - 2008
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.08.0208.0026
Subject(s) - materials science , laser , ridge , optoelectronics , transverse mode , optics , transverse plane , diode , laser diode , waveguide , single mode optical fiber , semiconductor laser theory , geology , engineering , physics , paleontology , structural engineering
A novel InGaAsP/InP buried‐ridg waveguide laser diode structure is proposed and demonstrated for use as a single‐mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single‐mode operation without kinks or beam‐steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 μm up to an injection current of 500 mA.