Open AccessHighly Linear and Efficient Microwave GaN HEMT Doherty Amplifier for WCDMA
Author(s) -
Lee YongSub,
Lee MunWoo,
Jeong YoonHa
Publication year - 2008
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.08.0207.0181
Subject(s) - amplifier , doherty amplifier , high electron mobility transistor , adjacent channel , w cdma , electrical engineering , wideband , electronic engineering , dbc , power added efficiency , microwave , rf power amplifier , code division multiple access , engineering , telecommunications , voltage , transistor , cmos
A highly linear and efficient GaN HEMT Doherty amplifier for wideband code division multiple access (WCDMA) repeaters is presented. For better performance, the adaptive gate bias control of the peaking amplifier using the power tracking circuit and the shunt capacitors is employed. The measured one‐carrier WCDMA results show an adjacent channel leakage ratio of −43.2 dBc at ±2.5‐MHz offset with a power added efficiency of 40.1% at an average output power of 37 dBm, which is a 7.5 dB back‐off power from the saturated output power.