Open AccessHigh Security FeRAM‐Based EPC C1G2 UHF (860 MHz‐960 MHz) Passive RFID Tag Chip
Author(s) -
Kang HeeBok,
Hong SukKyoung,
Song YongWook,
Sung Man Young,
Choi Bokgil,
Chung Jinyong,
Lee JongWook
Publication year - 2008
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.08.0108.0338
Subject(s) - ferroelectric ram , capacitor , capacitance , electrical engineering , chip , materials science , decoupling capacitor , ultra high frequency , optoelectronics , electronic engineering , engineering , voltage , physics , electrode , quantum mechanics
The metal‐ferroelectric‐metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly‐insulator‐poly (PIP) capacitor and the metal‐insulator‐metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell.