Open AccessDegradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge
Author(s) -
Kim Taeyong,
Kim Taeki,
Kim Sangin,
Kim SangBae
Publication year - 2008
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.08.0108.0148
Subject(s) - degradation (telecommunications) , optoelectronics , oxide , materials science , electrostatic discharge , threshold voltage , optical fiber , voltage , electrical engineering , computer science , telecommunications , engineering , transistor , metallurgy
The effect of forward and reverse electrostatic discharge (ESD) on the electro‐optical characteristics of oxide vertical‐cavity surface‐emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD‐induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD‐induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro‐optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.