Open AccessModel‐Based Analysis of the ZrO 2 Etching Mechanism in Inductively Coupled BCl 3 /Ar and BCl 3 /CHF 3 /Ar Plasmas
Author(s) -
Kim Mansu,
Min NamKi,
Yun Sun Jin,
Lee Hyun Woo,
Efremov Alexander M.,
Kwon KwangHo
Publication year - 2008
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.08.0107.0206
Subject(s) - langmuir probe , plasma , etching (microfabrication) , ion , flux (metallurgy) , analytical chemistry (journal) , plasma parameters , chemistry , materials science , plasma modeling , plasma diagnostics , layer (electronics) , nanotechnology , chromatography , metallurgy , physics , organic chemistry , quantum mechanics
The etching mechanism of ZrO 2 thin films and etch selectivity over some materials in both BCl 3 /Ar and BCl3/CHF3/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0‐dimensional) plasma models are developed with Langmuir probe diagnostics data. In BCl3/Ar plasma, changes in gas mixing ratio result in nonlinear changes of both densities and fluxes for Cl, BCl2, and BCl2 + . In this work, it is shown that the nonmonotonic behavior of the ZrO2 etch rate as a function of the BCl3/Ar mixing ratio could be related to the ion‐assisted etch mechanism and the ion‐flux‐limited etch regime. The addition of up to 33% CHF 3 to the BCl 3 ‐rich BCl3/Ar plasma does not influence the ZrO2 etch rate, but it non‐monotonically changes the etch rates of both Si and SiO2. The last effect can probably be associated with the corresponding behavior of the F atom density.