Open AccessRadiation Effects of Proton Particles in Memory Devices
Author(s) -
Lho Young Hwan,
Kim Ki Yup
Publication year - 2007
Publication title -
etri journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.295
H-Index - 46
eISSN - 2233-7326
pISSN - 1225-6463
DOI - 10.4218/etrij.07.0206.0157
Subject(s) - eeprom , radiation hardening , single event upset , static random access memory , radiation , microcontroller , upset , space radiation , electrical engineering , space environment , optoelectronics , materials science , engineering , physics , nuclear physics , mechanical engineering , cosmic ray , geophysics
In this letter, we study the impact of single event upsets (SEUs) in space or defense electronic systems which use memory devices such as EEPROM, and SRAM. We built a microcontroller test board to measure the effects of protons on electronic devices at various radiation levels. We tested radiation hardening at beam current, and energy levels, measured the phenomenon of SEUs, and addressed possible reasons for SEUs.